Fabrication of Schottky Barrier Diodes Utilizing Schiff Base Compounds and Metal Complexes with Schiff Base Ligands

Author:

Dutta Basudeb1ORCID,Halder Shibashis2ORCID

Affiliation:

1. Department of Chemical Sciences Indian Institute of Science Education and Research Kolkata Mohanpur West Bengal 741246 India

2. Department of Chemistry T.N.B. College Bhagalpur Bihar 812007 India

Abstract

AbstractFabrications of different kinds of diodes with various types of materials are the trends of modern research. In recent times organic materials and metal complexes containing organic ligands are chosen preferably for the fabrication of Schottky barrier diodes. Utilizations of Schiff‐base compounds and Schiff base containing metal complexes in the making of Schottky barrier diodes are immensely appreciated because the syntheses of Schiff‐base compounds are quite straightforward, less expensive and require less time. Large scale production of Schiff base materials is comparatively easier because their syntheses involve facile condensation reaction and their optical properties can be easily tuned by introducing simple substituent groups. Designing appropriate molecular structure plays pivotal role in the conducting properties of the materials. The molecular systems with exiting conducting properties can be utilized for the fabrication of such active electronic device. Sometimes, the specific structural arrangements enhance the charge flow upon illumination of light. These materials can be used in making photosensitive diode devices. In this context, this review, comprising of a collection of research articles regarding Schottky diode device based on Schiff bases and metal complexes with Schiff base ligands, may be helpful for the researchers of the relevant field.

Publisher

Wiley

Subject

General Chemistry

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