Fabrication and Characterization of Metal/Semiconductor Junction Devices Using Four Benzaldehyde Derivatives

Abstract

AbstractFour benzaldehyde derivatives [ALD‐1: compound (1), ALD‐2: compound (2), ALD‐5: compound (3), ALD‐6: compound (4)] were taken to investigate their optical band gap by UV‐vis spectroscopy. Semiconducting devices were fabricated using these compounds to study their electrical properties. The current‐voltage (I–V) characteristics graph was obtained. Furthermore, the diode parameters were extracted by conventional methods to analyze the charge transport mechanism. From the dielectric study, a low dielectric constant was observed. Moreover, each compound‘s mobility and transit time were derived to compare the device performance of benzaldehyde derivatives.