Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor-Reference-Cited by-同舟云学术

Atomic Layer Deposition of HfO2 Thin Films Employing a Heteroleptic Hafnium Precursor

Published:2012-03 Issue:1-3 Volume:18 Page:27-35
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Xu Ke,Milanov Andrian P.,Parala Harish,Wenger Christian,Baristiran-Kaynak Canan,Lakribssi Kaoutar,Toader Teodor,Bock Claudia,Rogalla Detlef,Becker Hans-Werner,Kunze Ulrich,Devi Anjana

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.201106934/fullpdf

Reference34 articles.

1. The High-k Solution

2. The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

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