Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications-Reference-Cited by-同舟云学术

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Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

Published:2014-07-28 Issue:7-8-9 Volume:20 Page:282-290
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Zhang Hehe¹,Aslam Nabeel¹,Reiners Marcel¹,Waser Rainer¹,Hoffmann-Eifert Susanne¹

Affiliation:

1. Peter-Gruenberg-Institute (PGI-7) and Juelich Aachen Research Alliance; (JARA-FIT) Forschungszentrum Juelich; 52425 Juelich (Germany)

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference40 articles.

1. Band offsets of wide-band-gap oxides and implications for future electronic devices

2. High-κ gate dielectrics: Current status and materials properties considerations

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2. Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al₂O₃/TiO_x‐Based Memristive Devices;Advanced Electronic Materials;2023-10-05

3. Effect of electron conduction on the read noise characteristics in ReRAM devices;APL Materials;2022-10-01

4. An Improved I-V model for Resistive Random Access Memory;2022 International Conference on Electrical, Computer and Energy Technologies (ICECET);2022-07-20

5. Diagnostics of process plasma used for the production of memristive devices;Journal of Physics: Conference Series;2020-04-01

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