P‐51: Design of Integrated Gate drivers with Low Temperature Poly‐Silicon Thin Film Transistor-Reference-Cited by-同舟云学术

P‐51: Design of Integrated Gate drivers with Low Temperature Poly‐Silicon Thin Film Transistor

Published:2019-05-29 Issue:1 Volume:50 Page:1425-1428
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Zheng Can¹,Liu Libin¹,Chen Yipeng¹,Lu Jiangnan¹,Shi Shiming¹

Affiliation:

1. BOE Technology Group Co., LTD Beijing China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13206

Reference5 articles.

1. Ting-YuHsu* Hung-WeiLi Ya-QinHuanget al. “A Novel Method to Improve the LTPS Devices on Flexible Substrate by Off-state Bias Stress” SID’ 17 Dig. pp.40–43.

2. SatoruUtsugi Nobutake TakaoMatsumotoet al. “Novel LTPS Technology for Large Substrate” SID’ 16 Dig. pp.915–918.

3. KeiichiSano ShibinTang andRyujiNishikawa “Novel Vth Compensation LTPS Pixel Circuit for AMOLED” SID’ 17 Dig. pp.1339–1342.

4. Wei-ChuHsu Pi-ChengWu Ko-RueyJenet al. “A New LTPS Pixel Circuit for Compensating Variation of TFT Characteristics and Alleviating OLED Degradation” SID’ 15 Dig. pp.1127–1130.

5. Chih-LungLin Po-SyunChen andPing-ShiaoShieh “New Pixel Circuit with Simple Driving Scheme for Active-Matrix Organic Light-Emitting Diode Displays” SID’ 15 Dig. pp.1301–130.

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