Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals-Reference-Cited by-同舟云学术

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Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Published:2014-08-13 Issue:2 Volume:32 Page:213-221
ISSN:0934-0866
Container-title:Particle & Particle Systems Characterization
language:en
Short-container-title:Part. Part. Syst. Charact.

Author:

Zhou Shu¹²,Pi Xiaodong¹,Ni Zhenyi¹,Luan Qingbin¹,Jiang Yingying¹,Jin Chuanhong¹,Nozaki Tomohiro²,Yang Deren¹

Affiliation:

1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering; Zhejiang University; Hangzhou Zhejiang 310027 China

2. Department of Mechanical Science and Engineering; Tokyo Institute of Technology; Meguro Tokyo 152-8550 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference44 articles.

1. Impurity engineering of Czochralski silicon

2. Single dopants in semiconductors

3. Controlled Doping of Silicon Nanocrystals Investigated by Solution-Processed Field Effect Transistors

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

5. Ultrafast third order nonlinear optical response of donor and acceptor codoped and compensated silicon quantum dots

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