Phase Transformation and Switching Behavior of Magnetron Plasma Sputtered Ge 2 Sb 2 Se 4 Te-Reference-Cited by-同舟云学术

Phase Transformation and Switching Behavior of Magnetron Plasma Sputtered Ge ₂ Sb ₂ Se ₄ Te

Published:2022-09-06 Issue:10 Volume:3 Page:2200202
ISSN:2699-9293
Container-title:Advanced Photonics Research
language:en
Short-container-title:Advanced Photonics Research

Author:

Vitale Steven A.¹^ORCID,Miller Paul¹,Robinson Paul¹,Roberts Christopher¹,Liberman Vlad¹,Du Qingyang²,Zhang Yifei²,Popescu Cosmin-Constantin²,Shalaginov Mikhail Y.²,Kang Myungkoo³,Richardson Kathleen A.³,Gu Tian²,Ríos Carlos⁴⁵,Hu Juejun²

Affiliation:

1. Advanced Materials and Microsystems Group MIT Lincoln Laboratory Lexington MA 02421 USA

2. Department of Materials Science & Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

3. CREOL The College of Optics & Photonics University of Central Florida Orlando FL 32816 USA

4. Department of Materials Science & Engineering University of Maryland College Park MD 20724 USA

5. Institute for Research in Electronics and Applied Physics University of Maryland College Park MD 20742 USA

Funder

Office of the Secretary of Defense

Publisher

Wiley

Subject

Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adpr.202200202

Reference54 articles.

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2. b)D. L.Kencke I. V.Karpov B. G.Johnson S. J.Lee D.Kau S. J.Hudgens J. P.Reifenberg S. D.Savransky J.Zhang M. D.Giles G.Spadini presented at 2007 IEEE Int. Electron Devices Meeting IEDM Washington DC December 2007;

3. Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

4. Controlled switching of phase-change materials by evanescent-field coupling in integrated photonics [Invited]

5. Current-driven phase-change optical gate switch using indium–tin-oxide heater

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