Affiliation:
1. Department of Energy Science and Engineering and Energy Science and Engineering Research Center Daegu Gyeongbuk Institute of Science & Technology (DGIST) Daegu 42988 Republic of Korea
2. ICFO‐Institut de Ciencies Fotoniques The Barcelona Institute of Science and Technology Castelldefels 08860 Barcelona Spain
Abstract
AbstractAtomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next‐generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next‐generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light‐emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.
Funder
National Research Foundation of Korea
Subject
General Materials Science,General Chemistry
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献