Electrically and Optically Controllable p–n Junction Memtransistor Based on an Al 2 O 3 Encapsulated 2D Te/ReS 2 van der Waals Heterostructure-Reference-Cited by-同舟云学术

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Electrically and Optically Controllable p–n Junction Memtransistor Based on an Al 2 O 3 Encapsulated 2D Te/ReS 2 van der Waals Heterostructure

Published:2021-11-05 Issue:12 Volume:5 Page:2101303
ISSN:2366-9608
Container-title:Small Methods
language:en
Short-container-title:Small Methods

Author:

Nguyen Duc Anh¹,Jo Yongcheol¹,Tran Thi Uyen²,Jeong Mun Seok³,Kim Hyungsang¹,Im Hyunsik¹^ORCID

Affiliation:

1. Division of Physics and Semiconductor Science Dongguk University Seoul 04620 Republic of Korea

2. Department of Energy Science Sungkyunkwan University Suwon 16419 Republic of Korea

3. Department of Physics Department of Energy Engineering Hanyang University Seoul 04763 Republic of Korea

Publisher

Wiley

Subject

General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smtd.202101303

Reference61 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Memory leads the way to better computing

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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