Affiliation:
1. Institute of Applied Physics Military University of Technology 2 Kaliskiego St. Warsaw 00‐908 Poland
2. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China
Abstract
AbstractThe perovskite materials are broadly incorporated into optoelectronic devices due to a number of advantages. Their rapid technological progress is related to the relatively simple fabrication process, low production cost and high efficiency. Significant improvement is made in the light emitting, detection performance and device design especially operating in the visible and near‐infrared regions. This review presents the status and possible future development of the perovskite devices such as solar cells, photodetectors, and light‐emitting diodes. The fundamental properties of perovskite materials related to their effective device applications are summarized. Since the development of the perovskite technology is mainly driven by the revolutionary evolution of the semiconductor perovskite solar cell as a robust candidate for next‐generation solar energy harvesting, this topic is considered first. The device engineering of various perovskite photodetector structures, including perovskite quantum dot photodetectors, is then discussed in detail. Their performance is compared with the current commercial photodetectors available on the global market together with their challenges. Finally, the considerable progress in the fabrication of the perovskite light‐emitting diodes with external quantum efficiency exceeding 20% is presented. The paper is completed in an attempt to determine the development of perovskite optoelectronic devices in the future.
Funder
National Natural Science Foundation of China