Segmented Control of Selenization Environment for High‐Quality Cu2ZnSn(S,Se)4 Films Toward Efficient Kesterite Solar Cells

Author:

Jian Yue123,Han Litao1ORCID,Kong Xiangrui1,Xie Tianliang1,Kou Dongxing1,Zhou Wenhui1,Zhou Zhengji1,Yuan Shengjie1,Meng Yuena1,Qi Yafang1,Liang Guangxing2,Zhang Xianghua3,Zheng Zhi4,Wu Sixin1

Affiliation:

1. Key Laboratory for Special Functional Materials of MOE National & Local Joint Engineering Research Center for High‐efficiency Display and Lighting Technology Collaborative Innovation Center of Nano Functional Materials and Applications School of Materials Henan University Kaifeng 475004 China

2. Shenzhen Key Laboratory of Advanced Thin Films and Applications College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China

3. CNRS ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226 Université de Rennes Rennes F‐35000 France

4. Key Laboratory of Micro‐Nano Materials for Energy Storage and Conversion of Henan Province Institute of Surface Micro and Nano Materials College of Chemical and Materials Engineering Xuchang University Xuchang 461000 China

Abstract

AbstractHigh‐crystalline‐quality absorbers with fewer defects are crucial for further improvement of open‐circuit voltage (VOC) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. However, the preparation of high‐quality CZTSSe absorbers remains challenging due to the uncontrollability of the selenization reaction and the complexity of the required selenization environment for film growth. Herein, a novel segmented control strategy for the selenization environment, specifically targeting the evaporation area of Se, to regulate the selenization reactions and improve the absorber quality is proposed. The large evaporation area of Se in the initial stage of the selenization provides a great evaporation and diffusion flux for Se, which facilitates rapid phase transition reactions and enables the attainment of a single‐layer thin film. The reduced evaporation area of Se in the later stage creates a soft‐selenization environment for grain growth, effectively suppressing the loss of Sn and promoting element homogenization. Consequently, the mitigation of Sn‐related deep‐level defects on the surface and in the bulk induced by element imbalance is simultaneously achieved. This leads to a significant improvement in nonradiative recombination suppression and carrier collection enhancement, thereby enhancing the VOC. As a result, the CZTSSe device delivers an impressive efficiency of 13.77% with a low VOC deficit.

Funder

National Natural Science Foundation of China

Science and Technology Innovation Talents in Universities of Henan Province

Publisher

Wiley

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