Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation-Reference-Cited by-同舟云学术

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Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation

Published:1992-02 Issue:1 Volume:5 Page:53-66
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Chai Kam-Wing,Mawby P. A.,McCowen A.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference14 articles.

1. Kinetic Equations of Gases and Plasmas, Addison-Wesley, Reading, MA, 1966.

2. Transport equations for electrons in two-valley semiconductors

3. Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximations

4. Efficient and accurate use of the energy transport method in device simulation

5. The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrodynamic device simulation using new state variables tailored for a block Gummel iterative approach;Solid-State Electronics;1996-08

2. Simulation of transient thermal effects during GTO turn off;Microelectronics Journal;1996-03

3. Simulation of transient self-heating during power VDMOS transistor turn-off;International Journal of Electronics;1994-10

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