A discrete model of substitutional-interstitial diffusion in the Czochralski growth of semiconductor crystals-Reference-Cited by-同舟云学术

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A discrete model of substitutional-interstitial diffusion in the Czochralski growth of semiconductor crystals

Published:1988-06 Issue:2 Volume:1 Page:73-83
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Hearne M. T.,Rogers T. G.,Tuck B.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference10 articles.

1. and , Preparation of Single Crystals, Butterworths Scientific Publications, London, 1958.

2. Substitutional-interstitial diffusion in semiconductors

3. Radiotracer determination of the distribution of chromium in lec gallium arsenide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of parameters in numerical modelling of non-linear diffusion in semiconductors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;1990-06

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