Hall and Field-Effect Mobilities of Electrons Accumulated at a Lattice-Matched ZnO/ScAlMgO4 Heterointerface
Author:
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
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1. Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation;Applied Physics Letters;2021-11-15
2. Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN;Japanese Journal of Applied Physics;2019-05-14
3. Improved Structural and Electrical Properties of ZnO-Based Thin Film Transistors by Using Pulsed KrF Excimer Laser Irradiation;Journal of Electronic Materials;2019-02-26
4. Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors;ACS Applied Materials & Interfaces;2018-04-23
5. Ab initiocalculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4(0001) substrates;Materials Research Express;2016-12-02
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