Silicon Surface-Bound Redox-Active Conjugated Wires Derived From Mono- and Dinuclear Iron(II) and Ruthenium(II) Oligo(phenyleneethynylene) Complexes-Reference-Cited by-同舟云学术

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Silicon Surface-Bound Redox-Active Conjugated Wires Derived From Mono- and Dinuclear Iron(II) and Ruthenium(II) Oligo(phenyleneethynylene) Complexes

Published:2008-05-19 Issue:10 Volume:20 Page:1952-1956
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Gauthier Nicolas,Argouarch Gilles,Paul Frédéric,Humphrey Mark G.,Toupet Loic,Ababou-Girard Soraya,Sabbah Hussein,Hapiot Philippe,Fabre Bruno

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference41 articles.

1. Molecular Memories That Survive Silicon Device Processing and Real-World Operation

2. Measurements of Electron-Transfer Rates of Charge-Storage Molecular Monolayers on Si(100). Toward Hybrid Molecular/Semiconductor Information Storage Devices

3. Molecular Electronics. Synthesis and Testing of Components

4. Electronically Configurable Molecular-Based Logic Gates

5. Molecular Electronic Junctions

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