Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes-Reference-Cited by-同舟云学术

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Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes

Published:2008-11-12 Issue:5 Volume:21 Page:564-568
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim Sunkook,Ju Sanghyun,Back Ju Hee,Xuan Yi,Ye Peide D.,Shim Moonsub,Janes David B.,Mohammadi Saeed

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference15 articles.

1. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

2. Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics

3. 37.3: High Performance 2.2ʺ QCIF Full Color AMOLED Display based on Electrophosphorescence

4. Low-Temperature Polycrystalline Silicon Thin-Film Transist or Technologies for System-on-Glass Displays

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3. Fully Transparent, Ultrathin Flexible Organic Electrochemical Transistors with Additive Integration for Bioelectronic Applications;Advanced Science;2022-11-14

4. Optimization and simulation of a carbon nanotube arrangement for transparent conductive electrodes with record-high direct current to optical conductive ratios;Optical Materials Express;2021-03-22

5. Influence of thickness on crystallographic, stereometric, optoelectronic, and electrochemical characteristics of electron-beam deposited indium tin oxide thin films;Materials Chemistry and Physics;2021-02

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