Optimizing the Efficiency of Lead‐Free Cs2TiI6‐Based Double Halide Perovskite Solar Cells Using SCAPS‐1D

Author:

Rehman Ubaid ur1ORCID,Almousa Nouf2,Sahar Kashaf ul3,Ashfaq Arslan4,Mahmood Khalid4,Shokralla Elsammani Ali5,Al-Buriahi Mohammed S.6,Alrowaili Ziyad A.7,Capangpangan Rey Y.8,Alguno Arnold C.9

Affiliation:

1. Institute of Physics Polish Academy of Sciences 02-668 Warsaw Poland

2. Department of Physics College of Science Princess Nourah bint Abdulrahman University Riyadh 11671 Saudi Arabia

3. Institute of Chemistry Inorganic Materials Laboratory 52S The Islamia University of Bahawalpur Bahawalpur 63100 Pakistan

4. Department of Physics Government College University Faisalabad Faisalabad 38000 Pakistan

5. Department of Physics Faculty of Science Al-Baha University Alaqiq 65779-7738 Saudi Arabia

6. Department of Physics Sakarya University Sakarya 54050 Turkey

7. Department of Physics College of Science Jouf University Sakaka Saudi Arabia

8. Department of Physical Sciences and Mathematics College of Marine and Allied Sciences Mindanao State University at Naawan Misamis Oriental 9023 Philippines

9. Department of Physics Premier Research Institute of Science and Mathematics (PRISM) Mindanao State University - Iligan Institute of Technology Iligan City 9200 Philippines

Abstract

Conventional lead halides perovskites have attracted much attention to become a next‐generation solar technology. Besides their low cost and excellent efficiency, high toxic nature and device instability become the major issue to limit their wide applications. Ti‐based (Cs2TiI6) double halide perovskite solar cells (PSCs) have emerged as a potential candidate to become the best alternate. However, poor device efficiency is still a restriction. Therefore, proper optimization and deep device analysis are needed to explore the full potential of Cs2TiI6‐based PSCs. In the present research work, the open‐circuit voltage (Voc), current density (Jsc), fill factor (FF), and power conversion efficiency of Cs2TiI6‐based PSC are successfully optimized. The device optimization is performed using the different combinations of electron transport layers and hole transport layers along with absorber thickness, acceptor doping density, and interface defect density. The effect of Rseries and Rshunt is explored and identified the best device efficiency of 28.07% along with other photovoltaic (PV) parameters; Voc = 1.41 V, Jsc = 22.44 mA cm−2, and FF = 88.15%, respectively. The supportive analysis of CV and Mott–Schottky characteristics helps to get deep insight into the device's performance. Furthermore, the resultant PV parameters are compared to the previous studies as well.

Publisher

Wiley

Subject

General Energy

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