Affiliation:
1. University School of Basic and Applied Sciences Guru Gobind Singh Indraprastha University Dwarka India
2. University School of Chemical Technology Guru Gobind Singh Indraprastha University Dwarka India
3. Department of Physics Indian Institute of Technology Delhi Delhi India
4. Department of Polymer Science Bhaskaracharya College of Applied Sciences Delhi India
5. Dean of Colleges University of Delhi Delhi India
Abstract
AbstractBio‐based flexible dielectric substrates have gained tremendous attention for their potential to reduce environmental risks from nonbiodegradable electronic waste. The present study demonstrates the fabrication of facile, nontoxic, and biodegradable chitosan‐based flexible dielectric substrate using graphene nanoplatelet (GNP) as a nanofiller. The detailed impact of different concentrations of GNP (1, 2, and 3 wt%) into the chitosan (CS) matrix was studied on physicochemical, morphological, mechanical, electrical, and thermal properties. The fabricated CS/GNP composites showed improved mechanical strength, thermal stability, and electrical properties compared with unmodified CS film. The composites exhibited excellent thermal stability (200°C) with a promising biodegradation rate (within 6 days). The mechanical strength of the unmodified CS film was increased unequivocally with 2 wt% GNP loading with tensile strength of 23.56 Mpa. Furthermore, the current–voltage (I–V) characteristic curves for CS/GNP (2%) and CS/GNP (3%) showed similar current conduction and ohmic behavior in flat, bending, and flat‐after‐bending modes. The dielectric measurements revealed that the CS/GNP composite with 2 wt% filler exhibited optimal performance having permittivity (έ) of 32.71 (at 102 Hz) with low dielectric loss of 0.04 (at 106 Hz). These results suggest that the dielectric films offer strong prospects as an eco‐friendly alternative for various applications.Highlights
Biodegradable chitosan‐based flexible dielectric films were prepared.
Films were made using a simple solvent casting method with 1–3 wt% GNP filler.
Optimum physicochemical and electrical properties were seen at 2 wt% GNP.
CS/GNP (2%) film exhibited ohmic behavior in both flat and bending modes.
Excellent dielectric properties were achieved at 2 wt% GNP filler.