Lattice dynamics study of cubic Tb 2 O 3-Reference-Cited by-同舟云学术

Lattice dynamics study of cubic Tb 2 O 3

Published:2018-09-25 Issue:12 Volume:49 Page:2021-2027
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Ibáñez Jordi¹^ORCID,Blázquez Oriol²^ORCID,Hernández Sergi²^ORCID,Garrido Blas²,Rodríguez‐Hernández Plácida³^ORCID,Muñoz Alfonso³^ORCID,Velázquez Matias⁴^ORCID,Veber Philippe⁴⁵^ORCID,Manjón Francisco Javier⁶^ORCID

Affiliation:

1. Institute of Earth Sciences Jaume Almera (CSIC) Barcelona Spain

2. MIND‐IN₂UB, Departament d'ElectrònicaUniversitat de Barcelona Barcelona Spain

3. Departamento de FísicaInstituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna San Cristóbal de la Laguna Spain

4. CNRSUniversité de Bordeaux Pessac cedex France

5. CNRS, Institut Lumière MatièreUniversité Lyon, Université Claude Bernard Lyon 1 UMR 5306 Villeurbanne France

6. Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València València Spain

Funder

Spanish Ministerio de Economía y Competitividad

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5488

Reference26 articles.

1. Structural and electrical characteristics of high-k Tb2O3 and Tb2TiO5 charge trapping layers for nonvolatile memory applications

2. High dielectric constant terbium oxide (Tb2O3) dielectric deposited on strained-Si:C

3. Tb2O3 thin films: An alternative candidate for high-k dielectric applications

4. Determination of band offsets, chemical bonding, and microstructure of the (TbxSc1−x)2O3/Si system

5. Terbium oxide films grown by chemical vapor deposition from terbium(III) dipivaloylmethanate

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