Calibration and error analysis of metal-oxide-semiconductor field-effect transistor dosimeters for computed tomography radiation dosimetry-Reference-Cited by-同舟云学术

Calibration and error analysis of metal-oxide-semiconductor field-effect transistor dosimeters for computed tomography radiation dosimetry

Published:2017-10-26 Issue:12 Volume:44 Page:6589-6602
ISSN:0094-2405
Container-title:Medical Physics
language:en
Short-container-title:Med. Phys.

Author:

Trattner Sigal¹,Prinsen Peter²,Wiegert Jens²,Gerland Elazar-Lars³,Shefer Efrat³,Morton Tom⁴,Thompson Carla M.⁵⁶⁷,Yagil Yoad³,Cheng Bin⁸,Jambawalikar Sachin⁹,Al-Senan Rani⁹,Amurao Maxwell⁹,Halliburton Sandra S.⁴⁵⁶⁷,Einstein Andrew J.¹⁹

Affiliation:

1. Department of Medicine; Division of Cardiology; Columbia University Medical Center and New York-Presbyterian Hospital; New York NY 10032 USA

2. Philips Research; Eindhoven 5656AE The Netherlands

3. Philips Healthcare; Haifa 31004 Israel

4. Philips Healthcare; Cleveland OH 44143 USA

5. Division of Radiology; Imaging Institute; Cleveland Clinic; Cleveland OH USA

6. Department of Biomedical Engineering; Lerner Research Institute; Cleveland Clinic; Cleveland OH 44195 USA

7. Department of Chemical and Biomedical Engineering; Cleveland State University; Cleveland OH 44195 USA

8. Department of Biostatistics; Columbia University Mailman School of Public Health; New York NY 10032 USA

9. Department of Radiology; Columbia University Medical Center and New York-Presbyterian Hospital; New York NY 10032 USA

Funder

National Heart, Lung, and Blood Institute

Publisher

Wiley

Subject

General Medicine

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