Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1-Reference-Cited by-同舟云学术

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

Published:2009-03 Issue:1-3 Volume:15 Page:39-46
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Wrobel Aleksander M.,Walkiewicz-Pietrzykowska Agnieszka,Ahola Marja,Vayrynen I. Juhani,Ferrer-Fernandez Francisco J.,Gonzalez-Elipe Agustin R.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference36 articles.

1. Remote hydrogen plasma chemical vapor deposition using an organopentasilane cluster as a novel film‐forming precursor: Mechanism of the activation step

2. Preparation and Deposition Mechanism of a ‐ SiC : H Films by Using Hexamethyldisilane in a Remote H 2 Plasma

3. Remote Hydrogen Plasma Chemical Vapor Deposition of Amorphous Hydrogenated Silicon-Carbon Films from an Organosilane Molecular Cluster as a Novel Single-Source Precursor: Structure, Growth Mechanism, and Properties of the Deposit

4. Atomic hydrogen-induced chemical vapor deposition of a-Si:C:H thin-film materials from alkylsilane precursors

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