UHV Surface Chemistry of bis(ethylcyclopentadienyl)ruthenium, (C2H5C5H4)2Ru on an Oxide Substrate
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
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1. Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices
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3. Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium
4. Thermodynamic Calculations and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Bis(ethyl-π-cyclopentadienyl)Ru for Memory Applications
5. Growth Mechanism of Ru Films Prepared by Chemical Vapor Deposition Using Bis(ethylcyclopentadienyl)ruthenium Precursor
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1. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook;Chemistry of Materials;2020-05-14
2. Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen;Journal of The Electrochemical Society;2011
3. Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene;Journal of Crystal Growth;2010-06
4. High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine;Journal of The Electrochemical Society;2010
5. Surface chemistry of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)Ru on polycrystalline Ta;Surface Science;2009-03
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