P-15: High-Performance Fully Transparent Hafnium-Doped Zinc Oxide TFTs Fabricated at Low Temperature
Author:
Affiliation:
1. Institute of Microelectronics, Peking University; Beijing 100871 China
2. Shenzhen Graduate School, Peking University; Shenzhen 518055 China
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2014.tb00259.x/fullpdf
Reference10 articles.
1. “Review paper: Transparent amorphous oxide semiconductor thin film transistor.”;Kwon;Electronic Materials Letters,2011
2. “High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature,”;Zhang;Appl. Phys. Lett,2009
3. “Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits.”;Kang;IEEE Electron Devices Lett,2011
4. “High-performance indium-gallium-zinc oxide thin-film transistors based on anodic aluminum oxide.”;Lan;IEEE Trans. Electron Devices,2011
5. “Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors.”;Kim;Applied Physics Letters,2009
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure;Scientific Reports;2019-11-20
2. Amorphous semiconductor mobility limits;Journal of Non-Crystalline Solids;2016-01
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