P-117: Investigation on Movement of Ions in the Fringe Field Switching Mode Depending on Resistivity of Alignment Layer and Dielectric Anisotropic Sign of Liquid Crystal-Reference-Cited by-同舟云学术

P-117: Investigation on Movement of Ions in the Fringe Field Switching Mode Depending on Resistivity of Alignment Layer and Dielectric Anisotropic Sign of Liquid Crystal

Published:2014-06 Issue:1 Volume:45 Page:1421-1423
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Kim DaeHyung¹,Kim Da Eun¹,Lee Jun Hee¹,Song Ki Hoon¹,Ahn Seon Hong²,Lee SeungHee¹

Affiliation:

1. Applied Materials Institute for BIN Convergence, Department of BIN Fusion Technology and Department of PolymerNano-Science and Technology; Chonbuk National University; Jeonju Jeonbuk 561-756 Korea

2. Samsung Display Co.; Cheonan Chungnam 330-300 Korea

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2014.tb00375.x/fullpdf

Reference10 articles.

1. “Electro-optical characteristics and switching behavior of the in-plane switching mode,”;Oh-e;Appl. Phys. Lett.,1995

2. “Devices and materials for high performance mobile liquid crystal displays”;Lee;J. Mat. Chem.,2012

3. “Electro-optic characteristics and switching principle of a nematic liquidcrystal cell controlled by fringe-field switching,”;Lee;Appl. Phys. Lett.,1998

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