27.2: High Definition 458 ppi OLED with Logic Circuit using Low Temperature Single-Crystal-Silicon (LTSS) TFT Backplane Driven by 2.5 V Single Power Supply

Author:

Ohnuma Hideto,Hamada Takashi,Shimomura Akihisa,Nagai Masaharu,Sekiguchi Keiichi,Kozuma Munehiro,Ikeda Takayuki,Yamazaki Shunpei,Mitani Masahiro,Suga Katsuyuki,Yamamoto Yoshitaka

Publisher

Wiley

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Device Physics of CAAC-IGZO FET;Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO;2016-11-04

2. Crystallization of long polycrystalline silicon with a long duration pulse from a Nd:YAG laser system;Japanese Journal of Applied Physics;2015-06-12

3. Channel length dependence of field-effect mobility ofc-axis-aligned crystalline In–Ga–Zn–O field-effect transistors;Japanese Journal of Applied Physics;2015-03-13

4. 62.3: Six-terminal OLED Display Using Low-Temperature Single-Crystal Silicon (LTSS) Technology;SID Symposium Digest of Technical Papers;2013-06

5. 31.2: Power Efficient 5.0-inch 440ppi Full HD a-Si TFT LCD Single-Chip Driver IC;SID Symposium Digest of Technical Papers;2013-06

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