70.4L:Late-News Paper: Flexible Amorphous Silicon PIN Diode Sensor Array Process Compatible with Indium Gallium Zinc Oxide Transistors-Reference-Cited by-同舟云学术

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70.4L:Late-News Paper: Flexible Amorphous Silicon PIN Diode Sensor Array Process Compatible with Indium Gallium Zinc Oxide Transistors

Published:2013-06 Issue:1 Volume:44 Page:455-457
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Marrs Michael A.,Bawolek Edward J.,O'Brien Barry P.,Smith Joseph T.,Strnad Mark,Morton David C.

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2013.tb06245.x/fullpdf

Reference5 articles.

1. Stability of IZO and a-Si:H TFTs Processed at Low Temperature (200°C);Kaftanoglu;IEEE Journal of Display Technology,2010

2. Control of Threshold Voltage and Saturation Mobility Using Dual-Active-Layer Device Based on Amorphous Mixed Metal-Oxide-Semiconductor on Flexible Plastic Substrates;Marrs;IEEE Transactions on Electron Devices,2011

3. Origin of Threshold Voltage Instability in Indium-Gallium-Zinc Oxide Thin Film Transistors;Jeong;Appl. Phys. Lett.,2008

4. The Hydrogen Content of Plasma Deposited Silicon Nitride;Lanford;J. Electrochem. Soc.,1978

5. Processing Effects on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors;Chiang;Journal of Non-Crystalline Solids,2008

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors;Sensors;2016-07-26

2. Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films;RSC Advances;2015

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