Formation and Etching of the Insulating Sr‐Rich V5+ Phase at the Metallic SrVO3 Surface Revealed by Operando XAS Spectroscopy Characterizations

Author:

Polewczyk Vincent1ORCID,Mezhoud Moussa2,Rath Martando2,El‐Khaloufi Oualyd2ORCID,Bassato Ferdinando3ORCID,Fouchet Arnaud2ORCID,Prellier Wilfrid2ORCID,Frégnaux Mathieu4ORCID,Aureau Damien4ORCID,Braglia Luca1ORCID,Vinai Giovanni1ORCID,Torelli Piero1ORCID,Lüders Ulrike2ORCID

Affiliation:

1. Istituto Officina dei Materiali (IOM)–CNR Laboratorio TASC Area Science Park, S.S.14, km 163.5 I‐34149 Trieste Italy

2. Normandie Univ ENSICAEN UNICAEN CNRS CRISMAT 14000 Caen France

3. Department of Physics University of Trieste Via A. Valerio 2 34127 Trieste Italy

4. ILV CNRS UMR 8180 Université de Versailles Saint‐Quentin‐en‐Yvelines – Université Paris‐Saclay 78035 Versailles France

Abstract

AbstractIn the search of low cost and more efficient electronic devices, here the properties of SrVO3 transparent conductor oxide (TCO) thin film are investigated, both visible‐range optically transparent and highly conductive, it stands as a promising candidate to substitute the standard indium‐tin‐oxide (ITO) in applications. Its surface stability under water (both liquid and vapor) and other gaseous atmospheres is especially addressed. Through the use of spectroscopy characterizations, X‐ray photoemission and operando X‐ray absorption measurements, the formation of a thin Sr‐rich V5+ layer located at the surface of the polycrystalline SrVO3 film with aging is observed, and for the first time how it can be removed from the surface by solvating in water atmosphere. The surface recovery is associated to an etching process, here spectroscopically characterized in operando conditions, allowing to follow the stoichiometric modification under reaction. Once exposed in oxygen atmosphere, the Sr‐rich V5+ layer forms again. The findings improve the understanding of aging effects in perovskite oxides, allowing for the development of functionalized films in which it is possible to control or to avoid an insulating surface layer. This constitutes an important step towards the large‐scale use of V‐based TCOs, with possible implementations in oxide‐based electronics.

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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