Highly Stable and Sensitive (PEA)2PbBr4/CsPbBr3 Single‐Crystal Heterojunction X‐Ray Detector with Ultra‐Low Detection Limit

Author:

Xu Zhuangjie1,Xi He1ORCID,Sun Xue2,Liu Hongjie2,Liu Jiaxin2,Ba Yanshuang1,Chen Dandan1,Zhang Guodong2,Zhang Chunfu1,Ma Xiaohua1,Hao Yue1

Affiliation:

1. National Engineering Research Center of Wide Band‐gap Semiconductor, State Key Laboratory of Wide‐Bandgap Semiconductor Devices and Integrated Technology, School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 P. R. China

2. State Key Laboratory of Crystal Materials, Institute of Crystal Materials Shandong University Jinan 250100 P. R. China

Abstract

AbstractMetal halide perovskite (MHP) single crystals have shown great potential for high‐performance X‐ray detection due to their excellent carrier transport properties, tunable optical bandgap, and low‐temperature fabrication process. However, 3D perovskite single crystals suffer from severe ion migration, limiting the stability and sensitivity of X‐ray detectors. Herein, a lowing temperature crystallization (LTC) method for liquid‐phase epitaxial growth of 2D (PEA)2PbBr4 single‐crystal (SC) film on 3D CsPbBr3 substrate is demonstratedand a 2D/3D (PEA)2PbBr4/CsPbBr3 SC heterojunction is successfully constructed. The epitaxial (PEA)2PbBr4 layer shows a pronounced passivation effect on CsPbBr3 SC with a low trap density of 2.27 × 1010 cm−3. As such, the prepared 2D/3D heterojunction X‐ray detector achieves a record‐low detectable dose rate of 3.05 nGyair s−1 and high sensitivity of 34496 µC Gyair−1 cm−2 in 120 keV hard X‐ray detection, with a largely suppressed dark current drift of 2.49 × 10−4 nA cm−1 s−1 V−1. In addition, the heterojunction detector exhibits a self‐driven sensitivity of 44 µC Gyair−1 cm−2 due to its built‐in electric field. This work provides a simple strategy to controllable construct 2D/3D MHP SC heterojunction with excellent optoelectronic characteristic, which is conducive to promoting the development of MHP SC X‐ray detectors and other optoelectronic devices.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Technologies Research and Development Program

Publisher

Wiley

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