Sputter‐Deposited α‐MoO3 Interlayers for van der Waals Epitaxy and Film Transfer

Author:

Han Sangho1,Lee Sangho23,Ko Dohyun1,Zhang Xinyuan34,Kim Jeehwan234,Ross Caroline A.4,Kim Dong Hun1ORCID

Affiliation:

1. Department of Materials Science and Engineering Myongji University Yongin 17058 Republic of Korea

2. Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

3. Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA 02139 USA

4. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA 02139 USA

Abstract

AbstractIntegration of functional thin films onto flexible substrates is driven by the need to improve the performance and durability of flexible electronic devices. A van der Waals epitaxy technology that accomplishes the transfer of oxide or metal thin films via exfoliation or dissolution of sacrificial α‐MoO3 layers produced by sputtering is presented. The α‐MoO3 thin films, consisting of weakly bonded 2D layers, grow epitaxially on SrTiO3 (001) substrates, exhibiting mosaic domains rotated by 90°. Metallic Au films grown on the α‐MoO3 are transferred by mechanical exfoliation or by dissolving the α‐MoO3 in water at 45 °C. Spinel‐structured CoFe2O4 thin films grown on α‐MoO3 layers are easily transferred to flexible substrates via mechanical exfoliation, and the magnetic anisotropy of the transferred CoFe2O4 films is modulated by bending.

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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