Unveiling the Nanoscale Dielectric Gap and Its Influence on Ferroelectric Polarization Switching in Scanning Probe Microscopy

Author:

Eom Seongmun1ORCID,Kavle Pravin23ORCID,Kang Deokyoung23,Kim Yeongyu1,Martin Lane W.23ORCID,Hong Seungbum14ORCID

Affiliation:

1. Department of Materials Science and Engineering KAIST Daejeon 34141 Republic of Korea

2. Department of Materials Science and Engineering University of California Berkeley CA 94720 USA

3. Departments of Materials Science and NanoEngineering Chemistry, and Physics and Astronomy and the Rice Advanced Materials Institute Rice University Houston TX 77005 USA

4. KAIST Institute for NanoCentury (KINC) KAIST Daejeon 34141 Republic of Korea

Abstract

AbstractThe dielectric gap between the scanning probe microscopy (SPM) tip and the surface of a ferroelectric using conductive atomic force microscopy and piezoresponse force microscopy (PFM) is investigated. While the gap functions as a dielectric layer, it also allows tunneling current to inject charges into the ferroelectric when a critical loading force between 10–20 µN is applied to a tip with a radius of 25 nm under a bias voltage of 0.5 V. It is observed that the permittivity of the dielectric gap determines the coercive voltage measured by the piezoresponse hysteresis loop. While such studies done in air often produce coercive voltages much larger than those studied for the same materials in capacitor‐based studies, the use of high permittivity media such as water (ɛr = 79) or silicone oil (ɛr = 2.1‐2.8) produces coercive fields that more closely match those measured in conventional capacitor‐based polarization hysteresis loop measurements. Furthermore, using water as a dielectric medium in PFM imaging enhances the accuracy in extracting the amplitude and phase data from periodically poled lithium niobate crystals. These findings provide insight into the nanoscale phenomena of polarization switching instigated by the SPM tip and provide a pathway to improved quantitative studies.

Funder

Army Research Office

National Science Foundation

Intel Corporation

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

Wiley

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