Design and Synthesis of Fluorinated Quantum Dots for Efficient and Stable 0D/3D Perovskite Solar Cells

Author:

Zhao Bo1,Guo Junjun1,Zhao Chenyu1,Zhang Xuliang1,Huang Hehe1,Tang Zhijie1,Frolova Lyubov A.2,Troshin Pavel A.23,Ma Wanli14,Yuan Jianyu15ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University Suzhou Jiangsu 215123 P. R. China

2. Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS) Chernogolovka Moscow Region 142432 Russian Federation

3. Zhengzhou Research Institute Harbin Institute of Technology 26 Longyuan East 7th, Jinshui District Zhengzhou Henan Province 450000 P. R. China

4. Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Soochow University Suzhou Jiangsu 215123 P. R. China

5. Jiangsu Key Laboratory of Advanced Negative Carbon Technologies Soochow University Suzhou Jiangsu 215123 P. R. China

Abstract

AbstractDimensionality engineering involving the low‐dimensional and 3D perovskites has been demonstrated as an efficient promising strategy to modulate interfacial energy loss as well as instability in perovskite solar cells (PSCs). Herein, the use of fluorinated Cesium Lead Iodide (CsPbI3) perovskite quantum dot (PQD) is first reported as interface modification layer for PSCs. The binding between the CsPbI3 PQD surface and native oleic acid (OLA)/oleylamine (OAm) ligands is governed by a dynamic adsorption–desorption equilibrium. Perfluorooctanoic acid (PFA) with stronger binding affinity and more hydrophobic nature is explored to partially replace OLA to prepare the fluorinated ligand capped CsPbI3 PQDs (F‐CsPbI3). Through optimization of the addition of PFA during hot‐injection synthesis, the in situ treated F‐CsPbI3 PQDs display reduced surface defect states, higher photoluminescence quantum yields together with improved stability. Subsequently, both CsPbI3 and F‐CsPbI3 PQDs are utilized as interface engineering layer in PSCs, delivering the best efficiency values of 21.99% and 23.42%, respectively, which is significantly enhanced compared to the control device (20.37%). More importantly, benefiting from its more hydrophobic properties, the F‐CsPbI3 PQD treated device exhibits excellent ambient storage stability (25 °C, relative humidity: 35–45%), retaining over 80% of its initial efficiency after 1500 h aging.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Science and Technology Program of Suzhou

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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