Temperature‐Dependent Interplay between Structural and Charge Carrier Dynamics in CsMAFA‐Based Perovskites

Abstract

AbstractState‐of‐the‐art triple cation, mixed halide perovskites are extensively studied in perovskite solar cells, showing very promising performance and stability. However, an in‐depth fundamental understanding of how the phase behavior in Cs0.05FA0.85MA0.10Pb(I0.97Br0.03)3 (CsMAFA) affects the optoelectronic properties is still lacking. The refined unit cell parameters a and c in combination with the thermal expansion coefficients derived from X‐ray diffraction patterns reveal that CsMAFA undergoes an α–β phase transition at ≈280 K and another transition to the γ‐phase at ≈180 K. From the analyses of the electrodeless microwave photoconductivity measurements it is shown that shallow traps only in the γ‐phase negatively affect the charge carrier dynamics. Most importantly, CsMAFA exhibits the lowest amount of microstrain in the β‐phase at around 240 K, corresponding to the lowest amount of trap density, which translates into the longest charge carrier diffusion length for electrons and holes. Below 200 K a considerable increase in deep trap states is found most likely related to the temperature‐induced compressive microstrain leading to a huge imbalance in charge carrier diffusion lengths between electrons and holes. This work provides valuable insight into how temperature‐dependent changes in structure affect the charge carrier dynamics in FA‐rich perovskites.