An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications-Reference-Cited by-同舟云学术

An Ultrafast Nonvolatile Memory with Low Operation Voltage for High‐Speed and Low‐Power Applications

Published:2021-04-25 Issue:28 Volume:31 Page:2102571
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhang Zhi‐Cheng¹,Li Yuan¹,Li Jiaqiang²,Chen Xu‐Dong¹^ORCID,Yao Bei‐Wei¹,Yu Mei‐Xi¹,Lu Tong‐Bu¹,Zhang Jin²

Affiliation:

1. MOE International Joint Laboratory of Materials Microstructure Institute for New Energy Materials and Low Carbon Technologies School of Material Science and Engineering Tianjin University of Technology Tianjin 300384 China

2. Center for Nanochemistry Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Tianjin City

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202102571

Reference44 articles.

1. Emerging memory technologies: Trends, challenges, and modeling methods

2. In-memory computing with resistive switching devices