Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity

Author:

He Xinyi1,Nomoto Seiya1,Komatsu Takehito1,Katase Takayoshi1ORCID,Tadano Terumasa2ORCID,Kitani Suguru1,Yoshida Hideto3,Yamamoto Takafumi1,Mizoguchi Hiroshi4,Ide Keisuke1,Hiramatsu Hidenori15,Kawaji Hitoshi1,Hosono Hideo45,Kamiya Toshio15

Affiliation:

1. Laboratory for Materials and Structures Institute of Innovative Research Tokyo Institute of Technology 4259 Nagatsuta Midori Yokohama 226‐8503 Japan

2. Research Center for Magnetic and Spintronic Materials National Institute for Materials Science 1‐2‐1 Sengen Tsukuba Ibaraki 305‐0047 Japan

3. SANKEN (The Institute of Scientific and Industrial Research) Osaka University 8‐1 Mihogaoka Ibaraki Osaka 567‐0047 Japan

4. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba Ibaraki 305‐0044 Japan

5. MDX Materials Research Center for Element Strategy International Research Frontiers Initiative Tokyo Institute of Technology 4259 Nagatsuta Midori Yokohama 226‐8503 Japan

Abstract

AbstractThe development of environmentally benign thermoelectric materials with high energy conversion efficiency (ZT) continues to be a long‐standing challenge. So far, high ZT has been achieved using heavy elements to reduce lattice thermal conductivity (κlat). However, it is not preferred to use such elements because of their environmental load and high material cost. Here a new approach utilizing hydride anion (H) substitution to oxide ion is proposed for ZT enhancement in thermoelectric oxide SrTiO3 bulk polycrystals. Light element H substitution largely reduces κlat from 8.2 W/(mK) of SrTiO3 to 3.5 W/(mK) for SrTiO3−xHx with x = 0.216. The mass difference effect on phonon scattering is small in the SrTiO3−xHx, while local structure distortion arising from the distributed Ti−(O,H) bond lengths strongly enhances phonon scattering. The polycrystalline SrTiO3−xHx shows high electronic conductivity comparable to La‐doped SrTiO3 single crystal because the H substitution does not form a grain boundary potential barrier and thus suppresses electron scattering. As a consequence, SrTiO3−xHx bulk exhibits maximum ZT = 0.11 at room temperature and the ZT value increases continuously up to 0.22 at T = 657 K. The H substitution idea offers a new approach for ZT enhancement in thermoelectric materials without utilizing heavy elements.

Funder

Ministry of Education, Culture, Sports, Science and Technology

TEPCO Memorial Foundation

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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