Affiliation:
1. International Center for Quantum Design of Functional Materials (ICQD) Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 China
2. Key Laboratory of Strongly Coupled Quantum Matter Physics Department of Physics Chinese Academy of Sciences University of Science and Technology of China Hefei Anhui 230026 China
3. Hefei National Laboratory University of Science and Technology of China Hefei 230088 China
Abstract
AbstractWith the advent of the post Moore era, modern electronics require further device miniaturization of all electronic components, particularly ferroelectric memories, due to the need for massive data storage. This demand stimulates the exploration of robust switchable ferroelectric polarizations at the atomic scale. In this scenario, van der Waals ferroelectrics have recently gained increasing attention because of their stable layered structure at nanometer thickness, offering the opportunity to realize two‐dimensional ferroelectricity that is long‐sought in conventional thin film ferroelectrics. In this review, recent advancements are summarized in layered ferroelectrics with highlights of the fundamentals of intrinsic two‐dimensional ferroelectricity, the emergence of artificial stacking ferroelectricity, and related protype devices with exotic functions. In addition, the unique polarization control in van der Waals ferroelectrics is discussed. Although great challenges remain unsolved, these studies undoubtedly advance the integration of 2D ferroelectrics in electronics.
Funder
Fundamental Research Funds for the Central Universities
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials