Neuro‐Receptor Mediated Synapse Device Based on Crumpled MXene Ti 3 C 2 T x Nanosheets-Reference-Cited by-同舟云学术

Neuro‐Receptor Mediated Synapse Device Based on Crumpled MXene Ti 3 C 2 T x Nanosheets

Published:2021-09-02 Issue:48 Volume:31 Page:2104304
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Wang Kaiyang¹,Jia Yunfang¹^ORCID,Yan Xiaobing²^ORCID

Affiliation:

1. College of Electronic Information and Optical Engineering Nankai University Tianjin 300071 P. R. China

2. National‐Local Joint Engineering Laboratory of New Energy Photovoltaic Devices Research Center of Machine Vision Engineering of Hebei University College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104304

Reference45 articles.

1. Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

2. Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

3. Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

4. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

5. An Artificial Flexible Visual Memory System Based on an UV-Motivated Memristor

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