Implementing a Two‐in‐One Defect Passivation Strategy Utilizing CsX for High‐Performance Printable Carbon‐Based Perovskite Solar Cells

Author:

He Jingshan1,He Jingwen1,Ma Dun1,Shao Wu1,Sheng Jie1,Zhang Huidong1,Zhang Liming2,Zou Can3,Ding Tian1,Cen Ronghao1,Yang Shuang3,Chen Qi2,Wu Yongzhen1,Wu Wenjun1ORCID,Zhu Wei‐Hong1

Affiliation:

1. Key Laboratory for Advanced Materials and Institute of Fine Chemicals, Shanghai Key Laboratory of Functional Materials Chemistry, School of Chemistry and Molecular Engineering East China University of Science and Technology Shanghai 200237 China

2. i‐Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano‐Tech and Nano‐Bionics Chinese Academy of Sciences Suzhou 215123 China

3. Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering East China University of Science and Technology Shanghai 200237 China

Abstract

AbstractIn the rapidly advancing realm of perovskite solar cells, the rectification of defects has surfaced as a crucial scientific challenge. The control over defect states, especially in printable mesoscopic perovskite solar cells (p‐MPSCs), is hindered by the complexities of screen‐printing technology. Here a novel “two‐in‐one” defect passivation strategy is presented, through doping TiO2 paste with cesium halide salts (CsX, where X = F, Cl, Br, I) to integrate all‐inorganic Cs halides, particularly CsF, into the electron transport layer in p‐MPSCs. Owing to the robust interaction between F ions and TiO2 compared to Cs+ ions, and the inability of F to infiltrate the perovskite lattice, F and Cs+ play distinct roles starting from the buried interface of the p‐MPSCs. Specifically, F can rectify the oxygen vacancies on the TiO2 surface, thus alleviating the residual stress at the perovskite's buried interface. Simultaneously, Cs+ diffuses to the top perovskite and mends the methylamine vacancies. As a result, the PCE of the optimal device, based on F‐doped TiO2, witnesses a significant improvement from 16.18% (control) to 18.24%. The two‐in‐one strategy utilizing CsX from the buried interface can well realize the all‐inorganic defect rectification, thereby offering a promising prospect for the enhancement of p‐MPSC performance.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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