Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe 2-Reference-Cited by-同舟云学术

Ternary‐Responsive Field‐Effect Transistors and Multilevel Memories Based on Asymmetrically Functionalized Janus Few‐Layer WSe 2

Author:

Qiu Haixin¹,Herder Martin²,Hecht Stefan²³⁴,Samorì Paolo¹^ORCID

Affiliation:

1. University of Strasbourg CNRS, ISIS UMR 7006 8 Allée Gaspard Monge Strasbourg F‐67000 France

2. Department of Chemistry and IRIS Adlershof Humboldt‐Universität zu Berlin 12489 Berlin Germany

3. DWI–Leibniz Institute for Interactive Materials Forckenbeckstr. 50 52074 Aachen Germany

4. Institute of Technical and Macromolecular Chemistry RWTH Aachen University Worringer Weg 2 52074 Aachen Germany

Funder

European Commission

Agence Nationale de la Recherche

Centre International de Recherche aux Frontières de la Chimie

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

Reference57 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献