Near‐Unity Quantum Yield ZnSeTe Quantum Dots Enabled by Controlling Shell Growth for Efficient Deep‐Blue Light‐Emitting Diodes

Author:

Cheng Chunyan1,Yu Binbin1,Huang Fei1ORCID,Gao Lei1,Cao Kequan1,Zang Panpan1,Zheng Kaibo2,Tian Jianjun1

Affiliation:

1. Institute for Advanced Materials and Technology University of Science and Technology Beijing Beijing 100083 China

2. Chemical Physics and Nano Lund University Lund 22100 Sweden

Abstract

AbstractCore–shell structural ZnSeTe/ZnSe/ZnS quantum dots (QDs) have attracted great attention for advanced illumination and displays because of their environmentally friendly composition, but still suffering from poor photoluminescence (PL) and electroluminescence (EL) performance due to severe non‐radiative charge recombination. Herein, a stepwise injection shell growth process to manipulate the monomer concentration and ensure adequate growth interval is devised, which enables the controllable uniform epitaxial growth of ZnSe and ZnS shells on the ZnSeTe core, thus relieving the lattice distortion and defects to greatly suppress the non‐radiative charge recombination. The ZnSeTe/ZnSe/ZnS QDs presented deep‐blue emission at 448 nm with narrow full width at half maximum (FWHM, 23 nm), and near‐unity PL quantum yield (PLQY, ≈100%) The light‐emitting diodes (LEDs) based on the QDs exhibited a high external quantum efficiency (EQE) of 10.9%, a maximum brightness of 10240 cd cm−2, and a high current efficiency of 7.9 cd A−1, demonstrating a good performance for deep blue QDs LEDs (QLEDs) This shell growth strategy will be an effective approach to achieving efficient QDs and QLEDs.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Basic and Applied Basic Research Foundation of Guangdong Province

Key Technologies Research and Development Program

Publisher

Wiley

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