Significant Enhancement of Electrocaloric Effect in Ferroelectric Polycrystalline Ceramics Through Grain Boundary Barrier Engineering

Author:

Xiao Wenrong1,Zhang Chao1,Gong Xuetian1,Qiu Shiyong1,Wang Junya23,Zhang Haibo4,Luo Wei1,Jiang Shenglin1,Li Kanghua1,Zhang Guangzu1ORCID

Affiliation:

1. School of Integrated Circuits, Engineering Research Center for Functional Ceramics MOE Huazhong University of Science and Technology Wuhan Hubei 430074 China

2. School of Mechanical Science and Engineering Huazhong University of Science and Technology Wuhan Hubei 430074 China

3. Optics Valley Laboratory Huazhong University of Science and Technology Wuhan Hubei 430074 China

4. School of Materials Science and Engineering State Key Laboratory of Materials Processing and Die & Mould Technology Huazhong University of Science and Technology Wuhan Hubei 430074 China

Abstract

AbstractA key challenge currently for the new ferroelectric refrigeration with high efficiency and environmental friendliness lies in the urgent demand for ferroelectric materials with huge electrocaloric effects (ECE). Ferroelectric polycrystalline ceramics with high ECE stand out as one of the most promising candidates for electrocaloric cooling applications. However, the grain boundary network, as a barrier for the cross‐transmission of charged carriers, widely exists in electrocaloric polycrystalline ceramics and is often neglected in favor of focusing more on composition regulation and structural design. Herein, a grain boundary barrier engineering is proposed that regulates the Schottky barrier at the grain boundary network in the Ba0.8Zr0.2TiO3 ceramics by a maneuverable annealing process and clarifies its critical role in enhancing the ECE of polycrystalline ceramics. As a result, a substantial enhancement of the EC performance (from 0.68 to 1.63 K at 50 °C and 80 kV cm−1, ≈2.4 times) has been achieved in the annealed Ba0.8Zr0.2TiO3 ceramics with a lower Schottky barrier. The microstructural and electrical characterization reveals that the lower Schottky barrier in the grain boundary network facilitates the domain switching and electronic transition, hence resulting in enhanced polarization response and EC performance.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

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