Bi‐Ligand Synergy Enables Threshold Low Voltage and Bandgap Stable Pure‐Red Mix‐Halide Perovskite LEDs

Abstract

AbstractPerovskite light‐emitting diodes (LEDs) emitting in the pure‐red range of 630–640 nm show promise in meeting the requirement of the Rec.2100 standard for high‐resolution displays. However, the high‐performing LEDs (external quantum efficiency, EQE >20%) in the pure‐red range suffer from half‐life time (luminance drop to 50% of the initial luminance) of <1.6 h, resulting from the injection/transportation barrier and surface‐defects–induced charge carrier quenching. Herein, a bi‐ligand synergy strategy is developed to address the T50 issue: the introduction of iodide‐rich ligands with different chain length increases the vacancy formation energy of halogen ions and enhances the exciton binding energy, resulting in a high photoluminescence quantum yield of over 92%. The treated CsPbBrx/I3−x films exhibit 34‐fold improved material stability related to the control at continuous aging at 100 °C. As a result, pure‐red LEDs with CIE coordinates of (0.698, 0.301) approaching the Rec.2100 standard are reported. These pure‐red LEDs exhibit a low turn‐on voltage of 1.8 V, which is the lowest among reported pure‐red perovskite LEDs, and even 0.15 V lower than the optical bandgap energy (1.95 eV); and a maximum EQE of ≈21% with fourfold enhanced T50 relative to the best previous pure‐red perovskite LEDs.