Quenching‐Resistant Solid‐State Photoluminescence of Graphene Quantum Dots: Reduction of π−π Stacking by Surface Functionalization with POSS, PEG, and HDA-Reference-Cited by-同舟云学术

Quenching‐Resistant Solid‐State Photoluminescence of Graphene Quantum Dots: Reduction of π−π Stacking by Surface Functionalization with POSS, PEG, and HDA

Published:2021-05-06 Issue:29 Volume:31 Page:2102741
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Park Minsu¹^ORCID,Jeong Yangho¹,Kim Hyung Suk²,Lee Woochan²,Nam Sang‐Hyeon¹,Lee Sukki¹,Yoon Hyewon¹,Kim Jin¹,Yoo Seunghyup²,Jeon Seokwoo¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

2. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202102741

Reference47 articles.

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4. Photoemission study of the thermal and photochemical decomposition of a urethane-substituted polythiophene

5. Carbon and Graphene Quantum Dots for Optoelectronic and Energy Devices: A Review

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