Affiliation:
1. School of Microelectronics Fudan University Shanghai 200433 China
2. School of Microelectronics Dalian University of Technology Dalian Liaoning 116024 China
3. Zhangjiang Fudan International Innovation Center Shanghai 201203 China
Abstract
AbstractImage stabilization is a crucial field in machine vision, aiming to eliminate image blurring or distortion caused by the camera or object jitter. However, traditional image stabilization techniques often suffer from the drawbacks of requiring complex equipment or extensive computing resources, resulting in inefficiencies. In contrast, the human retina performs a highly efficient all‐in‐one system, encompassing the detection and processing of light stimuli. In this study, an all‐optically controlled retinomorphic memristor based on the CsxFAyMA1‐x‐yPb(IzBr1‐z)3 is proposed, which integrates perception, storage, and processing functions. This memristor exhibits significant advantages in image stabilization. It is capable of positively and negatively modulating its conductance using specific intensities (11.8 and 0.9 mW cm−2, respectively) of red light (630 nm). To demonstrate the effectiveness of the proposed approach, handwritten digit recognition simulations are conducted. The application of specific light stimuli effectively highlights the characteristics of blurred images. The processed images are then fed into a conductance‐mapped neural network for rapid recognition. Remarkably, the recognition rates of the processed images reach 83.5% after 19 000 iterations, surpassing the performance of blurred images (only 56.2% after 19 000 iterations). These results highlight the immense potential of retinomorphic memristors as the hardware foundation for next‐generation image stabilization systems.
Funder
Science and Technology Commission of Shanghai Municipality
China Postdoctoral Science Foundation
National Key Research and Development Program of China
National Natural Science Foundation of China
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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