Strategic Approach for Enhancing Sensitivity of Ammonia Gas Detection: Molecular Design Rule and Morphology Optimization for Stable Radical Anion Formation of Rylene Diimide Semiconductors-Reference-Cited by-同舟云学术

Strategic Approach for Enhancing Sensitivity of Ammonia Gas Detection: Molecular Design Rule and Morphology Optimization for Stable Radical Anion Formation of Rylene Diimide Semiconductors

Published:2021-07-26 Issue:42 Volume:31 Page:2101981
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Oh Byeong M.¹,Park Sung‐Ha¹,Lee Jeong Hyeon²,Kim Jin Chul²,Lee Jong Bum¹,Eun Hyeong Ju¹,Lee Yun‐Sang¹³,Seo Bo Eun¹,Yoon Woojin⁴,Kwon Ji Eon⁵,Yun Hoseop⁴,Kwak Sang Kyu²,Kwon O‐Pil¹,Kim Jong H.¹^ORCID

Affiliation:

1. Department of Molecular Science and Technology Ajou University Suwon 16499 Republic of Korea

2. Department of Energy Engineering School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology 50 UNIST‐gil Ulsan 44919 Republic of Korea

3. Department of Applied Chemistry and Biological Engineering Ajou University Suwon 16499 Republic of Korea

4. Department of Chemistry and Department of Energy Systems Research Ajou University Suwon 16499 Republic of Korea

5. Functional Composite Materials Research Center Korea Institute of Science and Technology (KIST) Jeonbuk 55324 Republic of Korea

Funder

National Research Foundation of Korea

Korea Research Institute of Chemical Technology

Korea Institute of Science and Technology Information

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202101981

Reference30 articles.

1. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

2. 25th Anniversary Article: Recent Advances in n-Type and Ambipolar Organic Field-Effect Transistors

3. n-Type Organic Semiconductors in Organic Electronics

4. Ultra-flexible solution-processed organic field-effect transistors

5. Flexible organic transistors and circuits with extreme bending stability

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