Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping-Reference-Cited by-同舟云学术

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Published:2020-10-27 Issue:5 Volume:31 Page:2006941
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Tang Lei¹,Xu Runzhang¹,Tan Junyang¹,Luo Yuting¹,Zou Jingyun¹,Zhang Zongteng²,Zhang Rongjie¹,Zhao Yue²,Lin Junhao²,Zou Xiaolong¹,Liu Bilu¹^ORCID,Cheng Hui‐Ming¹³

Affiliation:

1. Shenzhen Geim Graphene Center Tsinghua–Berkeley Shenzhen Institute & Tsinghua Shenzhen International Graduate School Tsinghua University Shenzhen 518055 P. R. China

2. Department of Physics Southern University of Science and Technology Shenzhen 518055 P. R. China

3. Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 P. R. China

Funder

National Natural Science Foundation of China

Guangdong Innovative and Entrepreneurial Research Team Program

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202006941

Reference41 articles.