High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization-Reference-Cited by-同舟云学术

High Performance InP‐based Quantum Dot Light‐Emitting Diodes via the Suppression of Field‐Enhanced Electron Delocalization

Published:2022-07-13 Issue:38 Volume:32 Page:2204529
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Li Haiyang¹²,Bian Yangyang¹,Zhang Wenjing¹,Wu Zhenghui¹³^ORCID,Ahn Tae Kyu²,Shen Huaibin¹,Du Zuliang¹

Affiliation:

1. Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Centre for High‐efficiency Display and Lighting Technology School of Materials and Engineering Henan University Kaifeng 475004 China

2. Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

3. Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China

Funder

National Natural Science Foundation of China

Fonds National de la Recherche Luxembourg

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202204529

Reference52 articles.