Suppressing Ion Migration of Mixed‐Halide Perovskite Quantum Dots for High Efficiency Pure‐Red Light‐Emitting Diodes

Author:

Xie Mingyuan12,Guo Jie3,Zhang Xiaoyu3,Bi Chenghao1,Sun Xuejiao4,Li Hangren1,Zhang Lin1,Binks David5,Li Gang6,Zheng Weitao3,Tian Jianjun12ORCID

Affiliation:

1. Institute for Advanced Materials and Technology University of Science and Technology Beijing Beijing 100083 China

2. Shunde Innovation School University of Science and Technology Beijing Foshan Guangdong 528399 China

3. Key Laboratory of Automobile Materials Ministry of Education College of Materials Science and Engineering Jilin University Changchun 130012 China

4. Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

5. Department of Physics and Astronomy and Photon Science Institute University of Manchester Manchester M13 9PL UK

6. Department of Electronic and Information Engineering Research Institute for Smart Energy (RISE) The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong 999077 China

Abstract

AbstractPerovskite‐based light‐emitting diodes (PeLEDs) with a mixed halide composition can be used to obtain the “pure red” emission, i.e., in the 620–650 nm range, required for high‐definition displays. However, fast halide ion migration induces phase separation in these materials under electric fields, resulting in poor spectral stability and low efficiency. Herein, a method for producing mixed halide CsPbI3‐xBrx quantum dots (QDs) is reported in which ion migration is suppressed. The mixed halide composition is first achieved by anion exchange between CsPbI3 QDs and hydrobromic acid (HBr), during that the bromine ions efficiently passivate the iodine vacancies of the QDs. The original oleic acid ligands are then exchanged for 1‐dodecanethiol (1‐DT), which suppresses halide ion migration via the strong binding of the sulfhydryl group with the QD surface. PeLEDs based on these QDs exhibit a pure‐red electroluminescence (EL) peak at 637 nm, a maximum external quantum efficiency (EQE) of 21.8% with an average value of 20.4%, a peak luminance of 2653 cd m−2, and low EQE decease with increasing luminance. The EL spectrum of these devices is stable even at 6.7 V and they have an EQE half‐life of 70 min at an initial luminance of 150 cd m−2.

Funder

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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