Enhancement of Reverse Intersystem Crossing in Charge‐Transfer Molecule through Internal Heavy Atom Effect-Reference-Cited by-同舟云学术

Enhancement of Reverse Intersystem Crossing in Charge‐Transfer Molecule through Internal Heavy Atom Effect

Published:2021-08-03 Issue:50 Volume:31 Page:2104646
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim Hyung Suk¹^ORCID,Lee Ja Yeon²,Shin Seongjun³,Jeong Wonkyo³,Lee Sang Hoon²,Kim Seonghyeon³,Lee Jihoon³,Suh Min Chul²,Yoo Seunghyup¹^ORCID

Affiliation:

1. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

2. Department of Information Display Kyung Hee University Seoul 02447 Republic of Korea

3. Department of Polymer Science and Engineering and Department of IT∙Energy Convergence (BK21 FOUR) Korea National University of Transportation Chungju 27469 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104646

Reference42 articles.

1. Highly efficient phosphorescent emission from organic electroluminescent devices

2. Highly efficient organic light-emitting diodes from delayed fluorescence

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4. Analysis of exciton annihilation in high-efficiency sky-blue organic light-emitting diodes with thermally activated delayed fluorescence

5. Dual enhancement of electroluminescence efficiency and operational stability by rapid upconversion of triplet excitons in OLEDs

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