Affiliation:
1. Escuela Superior de Ciencias Experimentales y Tecnología Universidad Rey Juan Carlos C/ Tulipán, s/n Móstoles Madrid 28933 Spain
2. Institute of Advanced Materials (INAM) Universitat Jaume I Castelló 12006 Spain
Abstract
AbstractMetal halide perovskites are archetypal ionic‐electronic materials with great prospects for optoelectronic applications. Among the rich variety of physics exhibited by ionic‐electronic conduction, here, those most relevant to optoelectronic devices in which ionic mechanisms introduce a kinetic delay in the electronic phenomena are analyzed. The attention is focused on the inductive loop features and a dynamical model is developed to describe the corresponding complex multiscale dynamics in the time domain under experimental conditions, finally explaining the fundamental structure of the current transient responses in halide perovskite semiconductors. Based on complex capacitive and inductive patterns extensively studied in impedance measurements, an adequate interpretation of time domain methods capable of monitoring charge‐carrier dynamics is produced. Therefore, this methodology identifies the characteristic parameters of all types of transient dynamics in metal halide perovskites, providing a suitable connection of correlated techniques, including impedance and chronoamperometric experiments, toward a robust interpretation of the device response. The scope of the method is fairly general, since these counterintuitive transient effects are observable not only in metal halide perovskites, but also in multiple materials and processes, mainly in different research fields pertaining to electrochemistry and electronics.
Funder
Universidad Rey Juan Carlos
European Research Council
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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