Interface Carriers and Enhanced Electron‐Phonon Coupling Effect in Al 2 O 3 /TiO 2 Heterostructure Revealed by Resonant Inelastic Soft X‐Ray Scattering-Reference-Cited by-同舟云学术

Interface Carriers and Enhanced Electron‐Phonon Coupling Effect in Al 2 O 3 /TiO 2 Heterostructure Revealed by Resonant Inelastic Soft X‐Ray Scattering

Published:2021-06-20 Issue:35 Volume:31 Page:2104430
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Shao Yu‐Cheng¹,Kuo Cheng‐Tai²^ORCID,Feng Xuefei¹^ORCID,Chuang Yi‐De¹^ORCID,Seok Tae Jun³⁴,Choi Ji Hyeon³⁴,Park Tae Joo³⁴^ORCID,Cho Deok‐Yong⁵^ORCID

Affiliation:

1. Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

2. Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory Menlo Park CA 94025 USA

3. Department of Materials Science & Chemical Engineering Hanyang University Ansan 15588 Korea

4. Department of Advanced Materials Engineering Hanyang University Ansan 15588 Korea

5. IPIT and Department of Physics Jeonbuk National University Jeonju 54896 Korea

Funder

National Research Foundation of Korea

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104430

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